High N-concentration GaInNAsSb materials for III–V solar cells with bandgaps below 0.8 eV

  • Isoaho, R. (Speaker)
  • Arto Aho (Contributor)
  • Severi Mäkelä (Contributor)
  • Hytönen Lauri (Contributor)
  • Guina, M. (Contributor)

    Activity: Talk or presentationConference presentation

    Period4 Sept 2018
    Event titleICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy
    Event typeConference
    LocationShanghai, ChinaShow on map