The dataset presented here corresponds to the experimental data reported in the manuscript "InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm" published in Optics Express (https://doi.org/10.1364/OE.416210). This paper describes the design and operation of an InGaN diode-pumped, ultra-narrow linewidth and low noise of a novel AlGaInP-based vertical-external-cavity surface-emitting-lasers (VECSEL) with emission at 689 nm. It includes the data for: > Fig. 2a: InGaN diode pump system power transfer; > Fig. 2a(inset): direct InGaN diode pump beam profile; > Fig. 2b: InGaN diode pump temperature dependent emission wavelength > Fig. 4a: AlGaInP-based VECSEL power transfer with and without an intracavity birefringent filter; > Fig. 4a(inset): InGaN diode pump beam profile measured after fibre; > Fig. 4b: free-running AlGaInP-based VECSEL emission spectra; > Fig. 4c: single frequency AlGaInP-based VECSEL beam quality measurement; > Fig. 4c(inset): AlGaInP-based VECSEL beam profile; > Fig. 5: relative intensity noise (RIN) for the pump laser; > Fig. 6: relative intensity noise (RIN) VECSEL system; > Fig. 7a: frequency noise power spectral density (PSD) for the VECSEL system; and > Fig. 7b: estimative of the linewidth of VECSEL system calculated via auto-correlation and the Wiener-Khintchine theorem.