Research output per year
Research output per year
Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
Education/Academic qualification
Master of Science (Technology), Science and Engineering
Award Date: 3 Dec 2014
Other or Unknown Education in Technology, Lower-Degree Level Tertiary Education
Award Date: 5 Nov 2014
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Dive into the research topics where Janne Puustinen is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Electronic properties of metamorphic GaSbBi films on GaAs
Hilska, J., Puustinen, J., Koivusalo, E. & Guina, M., 1 Feb 2025, In: APL Materials. 13, 2, 021104.Research output: Contribution to journal › Article › Scientific › peer-review
Open AccessFile2 Downloads (Pure) -
Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces
Luna, E., Puustinen, J., Hilska, J. & Guina, M., 28 Mar 2024, In: Journal of Applied Physics. 135, 12, 125303.Research output: Contribution to journal › Article › Scientific › peer-review
Open AccessFile3 Citations (Scopus)7 Downloads (Pure) -
Low bandgap GaAsNBi solar cells
Puustinen, J., Hilska, J., Aho, A., Luna, E., Fihlman, A. & Guina, M., 2024, In: Solar Energy Materials and Solar Cells. 264, 112598.Research output: Contribution to journal › Article › Scientific › peer-review
Open AccessFile5 Citations (Scopus)10 Downloads (Pure) -
Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure
Donmez, O., Aydın, M., Mutlu, S., Puustinen, J., Hilska, J., Guina, M. & Erol, A., Feb 2023, In: Materials Science in Semiconductor Processing. 154, 107227.Research output: Contribution to journal › Article › Scientific › peer-review
9 Citations (Scopus) -
Epitaxy and Properties of GaAs(N)Bi Alloys
Puustinen, J., 2023, Tampere: Tampere University. (Tampere University Dissertations - Tampereen yliopiston väitöskirjat; vol. 917)Research output: Book/Report › Doctoral thesis › Collection of Articles
Open Access
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International Conference on Molecular Beam Epitaxy - ICMBE2022
Hilska, J. (Speaker), Puustinen, J. (Contributor), Koivusalo, E. (Contributor) & Guina, M. (Contributor)
9 Sept 2022Activity: Talk or presentation › Conference presentation
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Spontaneous formation of aligned arrays of Bi-rich nanopillars-like structures within GaAs1-xBix /GaAs quantum wells by MBE
Puustinen, J. (Speaker)
2014Activity: Talk or presentation › Conference presentation
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Triple-period atomic ordering and V-shaped features in low temperature Ga(As,Bi)
Puustinen, J. (Speaker)
2014Activity: Talk or presentation › Conference presentation
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Improvement of MBE-grown GaAsBi quantum wells for laser applications
Puustinen, J. (Speaker)
2014Activity: Talk or presentation › Conference presentation
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Annealing-induced long-wavelength photoluminescence in GaAsBi
Puustinen, J. (Speaker)
2014Activity: Talk or presentation › Conference presentation