Abstract
We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | SPIE |
| Volume | 9349 |
| ISBN (Print) | 9781628414394 |
| DOIs | |
| Publication status | Published - 2015 |
| Publication type | A4 Article in a conference publication |
| Event | Vertical External Cavity Surface Emitting Lasers - , United Kingdom Duration: 1 Jan 2015 → … |
Conference
| Conference | Vertical External Cavity Surface Emitting Lasers |
|---|---|
| Country/Territory | United Kingdom |
| Period | 1/01/15 → … |
Keywords
- continuous wave
- frequency doubling
- heat management
- high power
- infrared
- power scaling
- SDL
- VECSEL
Publication forum classification
- Publication forum level 0
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics