1180nm VECSEL with 50 W output power

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    11 Citations (Scopus)


    We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

    Original languageEnglish
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    ISBN (Print)9781628414394
    Publication statusPublished - 2015
    Publication typeA4 Article in a conference publication
    EventVertical External Cavity Surface Emitting Lasers - , United Kingdom
    Duration: 1 Jan 2015 → …


    ConferenceVertical External Cavity Surface Emitting Lasers
    Country/TerritoryUnited Kingdom
    Period1/01/15 → …


    • continuous wave
    • frequency doubling
    • heat management
    • high power
    • infrared
    • power scaling
    • SDL
    • VECSEL

    Publication forum classification

    • Publication forum level 0

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics


    Dive into the research topics of '1180nm VECSEL with 50 W output power'. Together they form a unique fingerprint.

    Cite this