1180nm VECSEL with 50 W output power

Emmi Kantola; Tomi Leinonen; Sanna Ranta; Miki Tavast; Jussi-Pekka Penttinen; Mircea Guina

doi:10.1117/12.2079480

1180nm VECSEL with 50 W output power

Emmi Kantola
, Tomi Leinonen
, Sanna Ranta
, Miki Tavast
, Jussi-Pekka Penttinen
, Mircea Guina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

15 Citations (Scopus)

Abstract

We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	9349
ISBN (Print)	9781628414394
DOIs	https://doi.org/10.1117/12.2079480
Publication status	Published - 2015
Publication type	A4 Article in conference proceedings
Event	Vertical External Cavity Surface Emitting Lasers - , United Kingdom Duration: 1 Jan 2015 → …

Conference

Conference	Vertical External Cavity Surface Emitting Lasers
Country/Territory	United Kingdom
Period	1/01/15 → …

Keywords

continuous wave
frequency doubling
heat management
high power
infrared
power scaling
SDL
VECSEL

Publication forum classification

Publication forum level 0

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.2079480

Cite this

@inproceedings{0cda25369518488da76a346c2e945b2f,

title = "1180nm VECSEL with 50 W output power",

abstract = "We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97\% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28\% was achieved for 42 W of output power and -15°C mount temperature.",

keywords = "continuous wave, frequency doubling, heat management, high power, infrared, power scaling, SDL, VECSEL",

author = "Emmi Kantola and Tomi Leinonen and Sanna Ranta and Miki Tavast and Jussi-Pekka Penttinen and Mircea Guina",

year = "2015",

doi = "10.1117/12.2079480",

language = "English",

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volume = "9349",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Vertical External Cavity Surface Emitting Lasers ; Conference date: 01-01-2015",

}

TY - GEN

T1 - 1180nm VECSEL with 50 W output power

AU - Kantola, Emmi

AU - Leinonen, Tomi

AU - Ranta, Sanna

AU - Tavast, Miki

AU - Penttinen, Jussi-Pekka

AU - Guina, Mircea

PY - 2015

Y1 - 2015

N2 - We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

AB - We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

KW - continuous wave

KW - frequency doubling

KW - heat management

KW - high power

KW - infrared

KW - power scaling

KW - SDL

KW - VECSEL

U2 - 10.1117/12.2079480

DO - 10.1117/12.2079480

M3 - Conference contribution

AN - SCOPUS:84925666801

SN - 9781628414394

VL - 9349

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

T2 - Vertical External Cavity Surface Emitting Lasers

Y2 - 1 January 2015

ER -

1180nm VECSEL with 50 W output power

Abstract

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Keywords

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