1.3 μm InAs quantum dot semiconductor disk laser

S. A. Blokhin; M. A. Bobrov; A. A. Blokhin; A. G. Kuzmenkov; A. P. Vasil'Ev; N. A. Maleev; V. V. Dudelev; K. K. Soboleva; G. S. Sokolovskii; A. Rantamäki; O. Okhotnikov; V. M. Ustinov

doi:10.1109/LO.2016.7549727

Abstract

Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality [1]. The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature [2]. However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated [3]. Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.

Original language	English
Pages	R317
DOIs	https://doi.org/10.1109/LO.2016.7549727
Publication status	Published - 23 Aug 2016
Event	2016 International Conference Laser Optics, LO 2016 - St. Petersburg, Russian Federation Duration: 27 Jun 2016 → 1 Jul 2016

Conference

Conference	2016 International Conference Laser Optics, LO 2016
Country/Territory	Russian Federation
City	St. Petersburg
Period	27/06/16 → 1/07/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/LO.2016.7549727

Blokhin-LO2016-1.3 μm InAs Quantum Dot Semiconductor Disk Laser
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Accepted author manuscript, 142 KB

http://urn.fi/URN:NBN:fi:tty-201612024842

Cite this

Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Kuzmenkov, A. G., Vasil'Ev, A. P., Maleev, N. A., Dudelev, V. V., Soboleva, K. K., Sokolovskii, G. S., Rantamäki, A., Okhotnikov, O., & Ustinov, V. M. (2016). 1.3 μm InAs quantum dot semiconductor disk laser. R317. Abstract from 2016 International Conference Laser Optics, LO 2016, St. Petersburg, Russian Federation. https://doi.org/10.1109/LO.2016.7549727

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title = "1.3 μm InAs quantum dot semiconductor disk laser",

abstract = "Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality [1]. The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature [2]. However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated [3]. Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.",

author = "Blokhin, {S. A.} and Bobrov, {M. A.} and Blokhin, {A. A.} and Kuzmenkov, {A. G.} and Vasil'Ev, {A. P.} and Maleev, {N. A.} and Dudelev, {V. V.} and Soboleva, {K. K.} and Sokolovskii, {G. S.} and A. Rantam{\"a}ki and O. Okhotnikov and Ustinov, {V. M.}",

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doi = "10.1109/LO.2016.7549727",

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Blokhin, SA, Bobrov, MA, Blokhin, AA, Kuzmenkov, AG, Vasil'Ev, AP, Maleev, NA, Dudelev, VV, Soboleva, KK, Sokolovskii, GS, Rantamäki, A, Okhotnikov, O & Ustinov, VM 2016, '1.3 μm InAs quantum dot semiconductor disk laser', 2016 International Conference Laser Optics, LO 2016, St. Petersburg, Russian Federation, 27/06/16 - 1/07/16 pp. R317. https://doi.org/10.1109/LO.2016.7549727

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AU - Kuzmenkov, A. G.

AU - Vasil'Ev, A. P.

AU - Maleev, N. A.

AU - Dudelev, V. V.

AU - Soboleva, K. K.

AU - Sokolovskii, G. S.

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