1.3 μm photoresponsivity in Si-based Ge1-xCx photodiodes

Xiaoping Shao, S. L. Rommel, B. A. Orner, H. Feng, M. W. Dashiell, R. T. Troeger, J. Kolodzey, Paul R. Berger, Thomas Laursen

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)

Abstract

Ge1-xCx/Si heterostructure photodiodes with nominal carbon percentages (0≤x≤0.02), which exceed the solubility limit, were grown by solid source molecular beam epitaxy on n-type (100) Si substrates. The p-Ge1-xCx/n-Si photodiodes were fabricated and tested. The p-Ge1-xCx/n-Si junction exhibits diode rectification with a reverse saturation current of about 10 pA/μm2 at -1 V and high reverse breakdown voltage, up to -80 V. A significant reduction in diode reverse leakage current was observed by adding C to Ge, but these effects saturated with more C. Photoresponsivity was observed from these Si-based p-Ge1-xCx/n-Si photodiodes at a wavelength of ≥1.3 μm, compatible with fiber optic wavelengths. External quantum efficiency of these thin surface-normal photodetectors was measured up to 2.2%, which decreased as the carbon percentage was increased.

Original languageEnglish
Pages (from-to)1860-1862
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number15
DOIs
Publication statusPublished - 1998
Externally publishedYes
Publication typeA1 Journal article-refereed

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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