Abstract
Ge1-xCx/Si heterostructure photodiodes with nominal carbon percentages (0≤x≤0.02), which exceed the solubility limit, were grown by solid source molecular beam epitaxy on n-type (100) Si substrates. The p-Ge1-xCx/n-Si photodiodes were fabricated and tested. The p-Ge1-xCx/n-Si junction exhibits diode rectification with a reverse saturation current of about 10 pA/μm2 at -1 V and high reverse breakdown voltage, up to -80 V. A significant reduction in diode reverse leakage current was observed by adding C to Ge, but these effects saturated with more C. Photoresponsivity was observed from these Si-based p-Ge1-xCx/n-Si photodiodes at a wavelength of ≥1.3 μm, compatible with fiber optic wavelengths. External quantum efficiency of these thin surface-normal photodetectors was measured up to 2.2%, which decreased as the carbon percentage was increased.
Original language | English |
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Pages (from-to) | 1860-1862 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 72 |
Issue number | 15 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |
Publication type | A1 Journal article-refereed |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)