@inproceedings{19190c18c52c446a85232f6b7b78d528,
title = "31\% European InGaP/GaAs/InGaNAs Solar Cells For Space Application",
abstract = "We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of \textasciitilde{}31\% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.",
author = "Roberta Campesato and Antti Tukiainen and Arto Aho and Gabriele Gori and Riku Isoaho and Erminio Greco and Mircea Guina",
year = "2017",
doi = "10.1051/e3sconf/20171603003",
language = "English",
series = "E3S Web of Conferences",
publisher = "EDP Sciences",
booktitle = "Proceedings of the 11th European Space Power Conference 2016",
address = "France",
note = "European Space Power Conference ; Conference date: 01-01-2000",
}