A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy

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Translated title of the contribution	A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy
Original language	English
Pages (from-to)	593-598
Number of pages	6
Journal	Journal of Vacuum Science & Technology B
Volume	7
Issue number	4
Publication status	Published - 1989
Publication type	A1 Journal article-refereed

Publication forum classification

@article{4332593288ed4aa9a4b5550c5d17e073,

title = "A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy",

author = "J. Lilja and J. Keskinen and M. Hovinen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1989",

language = "English",

volume = "7",

pages = "593--598",

journal = "Journal of Vacuum Science \& Technology B",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxy

AU - Lilja, J.

AU - Keskinen, J.

AU - Hovinen, M.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1989

Y1 - 1989

M3 - Article

VL - 7

SP - 593

EP - 598

JO - Journal of Vacuum Science & Technology B

JF - Journal of Vacuum Science & Technology B

IS - 4

ER -