Advanced grid concept with external busbars applied on III‒V multijunction solar cells

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

We report on the development of an advanced front contact grid design applied on GaInP/GaAs/GaInNAsSb solar cells. Unlike in a conventional grid pattern, the busbars are placed outside the active area of the solar cell. This enables minimizing the shadowing effect caused by the contact grid pattern as well as reaching smaller-active-area solar cells for concentrated photovoltaics, ultimately leading to higher conversion efficiencies. The quality of the solar cells was characterized by electroluminescence and current-voltage measurements. The concept was proven as a viable option for boosting the performance of multijunction solar cells.
Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
PublisherIEEE
Pages951-954
Number of pages4
ISBN (Electronic)978-1-7281-6115-0
ISBN (Print)978-1-7281-6116-7
DOIs
Publication statusPublished - 5 Jan 2021
Publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference -
Duration: 16 Jun 202021 Aug 2020
Conference number: 47
https://www.ieee-pvsc.org/PVSC47/index.php

Publication series

NameConference record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
Period16/06/2021/08/20
Internet address

Keywords

  • solar cell
  • Semiconducting III-V Materials
  • multijunction solar cells

Publication forum classification

  • Publication forum level 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy Engineering and Power Technology

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