Advances in epitaxy of GaAsBi: relation between growth parameters and material properties

Research output: Other conference contribution › Abstract › Scientific

Original language	English
Publication status	Published - 2017
Event	8th International Workshop on Bismuth-Containing Semiconductors - Marburg, Germany Duration: 23 Jul 2017 → 26 Jul 2017

Conference	8th International Workshop on Bismuth-Containing Semiconductors
Country/Territory	Germany
City	Marburg
Period	23/07/17 → 26/07/17

Cite this

@conference{7fa3424313cf492c8e55613f0d0c1e26,

title = "Advances in epitaxy of GaAsBi: relation between growth parameters and material properties",

author = "Janne Puustinen and Joonas Hilska and Mircea Guina",

year = "2017",

language = "English",

note = "8th International Workshop on Bismuth-Containing Semiconductors ; Conference date: 23-07-2017 Through 26-07-2017",

}