AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

Kostiantyn Nechay; Hermann Kahle; Jussi-Pekka Penttinen; Patrik Rajala; Antti Tukiainen; Sanna Ranta; Mircea Guina

doi:10.1109/LPT.2019.2924289

AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

Kostiantyn Nechay, Hermann Kahle, Jussi-Pekka Penttinen, Patrik Rajala, Antti Tukiainen, Sanna Ranta, Mircea Guina

Physics

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

Original language	English
Pages (from-to)	1245-1248
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	31
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2019.2924289
Publication status	Published - 1 Aug 2019
Publication type	A1 Journal article-refereed

Keywords

AlGaAs
AlGaInP
quantum well lasers
semiconductor disk lasers
semiconductor growth
semiconductor laser
vertical-external-cavity surface-emitting lasers (VECSELs)

Publication forum classification

Publication forum level 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2019.2924289

Cite this

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title = "AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm",

abstract = "An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.",

keywords = "AlGaAs, AlGaInP, quantum well lasers, semiconductor disk lasers, semiconductor growth, semiconductor laser, vertical-external-cavity surface-emitting lasers (VECSELs)",

author = "Kostiantyn Nechay and Hermann Kahle and Jussi-Pekka Penttinen and Patrik Rajala and Antti Tukiainen and Sanna Ranta and Mircea Guina",

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doi = "10.1109/LPT.2019.2924289",

language = "English",

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journal = "IEEE Photonics Technology Letters",

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TY - JOUR

T1 - AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

AU - Nechay, Kostiantyn

AU - Kahle, Hermann

AU - Penttinen, Jussi-Pekka

AU - Rajala, Patrik

AU - Tukiainen, Antti

AU - Ranta, Sanna

AU - Guina, Mircea

N1 - INT=phys,"Rajala, Patrik"

PY - 2019/8/1

Y1 - 2019/8/1

N2 - An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

AB - An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

KW - AlGaAs

KW - AlGaInP

KW - quantum well lasers

KW - semiconductor disk lasers

KW - semiconductor growth

KW - semiconductor laser

KW - vertical-external-cavity surface-emitting lasers (VECSELs)

U2 - 10.1109/LPT.2019.2924289

DO - 10.1109/LPT.2019.2924289

M3 - Article

AN - SCOPUS:85069529749

SN - 1041-1135

VL - 31

SP - 1245

EP - 1248

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

ER -

AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

Abstract

Keywords

Publication forum classification

ASJC Scopus subject areas

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