All solid source molecular beam epitaxy growth of 1.35-microm wavelenght strained-layer GaInAsp quantum well laser

M. Toivonen, A. Salokatve, M. Jalonen, J. Näppi, H. Asonen, M. Pessa

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    29 Citations (Scopus)
    Translated title of the contributionAll solid source molecular beam epitaxy growth of 1.35-microm wavelenght strained-layer GaInAsp quantum well laser
    Original languageEnglish
    Pages (from-to)797-799
    JournalElectronics Letters
    Volume31
    Issue number10
    Publication statusPublished - 1995
    Publication typeA1 Journal article-refereed

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