All solid source molecular beam epitaxy growth of 1.35-microm wavelenght strained-layer GaInAsp quantum well laser

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Translated title of the contribution	All solid source molecular beam epitaxy growth of 1.35-microm wavelenght strained-layer GaInAsp quantum well laser
Original language	English
Pages (from-to)	797-799
Journal	Electronics Letters
Volume	31
Issue number	10
Publication status	Published - 1995
Publication type	A1 Journal article-refereed

Publication forum classification

@article{c1f1642b27a947a39548efdc2c7ad3e3,

title = "All solid source molecular beam epitaxy growth of 1.35-microm wavelenght strained-layer GaInAsp quantum well laser",

author = "M. Toivonen and A. Salokatve and M. Jalonen and J. N{\"a}ppi and H. Asonen and M. Pessa",

note = "Contribution: organisation=fys,FACT1=1",

year = "1995",

language = "English",

volume = "31",

pages = "797--799",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons",

number = "10",

}

TY - JOUR

T1 - All solid source molecular beam epitaxy growth of 1.35-microm wavelenght strained-layer GaInAsp quantum well laser

AU - Toivonen, M.

AU - Salokatve, A.

AU - Jalonen, M.

AU - Näppi, J.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1995

Y1 - 1995

M3 - Article

SN - 0013-5194

VL - 31

SP - 797

EP - 799

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -