Abstract
The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant tunneling diodes which exhibit stable, repeatable, and hysteresis-free negative differential resistance (NDR) at room temperature for more than 1000 bias sweeps between −2.5 and +5.5 V. The device layers were grown on freestanding, Ga-polar GaN substrates grown by hydride vapor phase epitaxy and having a density of threading dislocations between 106 and 107cm−2. The authors speculate that the repeatable NDR is facilitated by the low-dislocation density substrates.
Original language | English |
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Article number | 02B110 |
Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
Volume | 35 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2017 |
Publication type | A1 Journal article-refereed |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry