AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

David F. Storm, Tyler A. Growden, Weidong Zhang, Elliott R. Brown, Neeraj Nepal, D. Scott Katzer, Matthew T. Hardy, Paul R. Berger, David J. Meyer

    Research output: Contribution to journalArticleScientificpeer-review

    11 Citations (Scopus)

    Abstract

    The authors report the growth by rf-plasma assisted molecular beam epitaxy of AlN/GaN/AlN resonant tunneling diodes which exhibit stable, repeatable, and hysteresis-free negative differential resistance (NDR) at room temperature for more than 1000 bias sweeps between −2.5 and +5.5 V. The device layers were grown on freestanding, Ga-polar GaN substrates grown by hydride vapor phase epitaxy and having a density of threading dislocations between 106 and 107cm−2. The authors speculate that the repeatable NDR is facilitated by the low-dislocation density substrates.

    Original languageEnglish
    Article number02B110
    JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
    Volume35
    Issue number2
    DOIs
    Publication statusPublished - 2017
    Publication typeA1 Journal article-refereed

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Instrumentation
    • Process Chemistry and Technology
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering
    • Materials Chemistry

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