Aluminium free GaInAsP/GaAs lasers of 808 nm wavelength range by Gas Source MBE

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific

3 Citations (Scopus)

Translated title of the contribution	Aluminium free GaInAsP/GaAs lasers of 808 nm wavelength range by Gas Source MBE
Original language	English
Title of host publication	Eight International Conference on Indium Phosphide and Related Materials, Schwäbisch-Gmünd, Germany, April 21-25, 1996
Place of Publication	Germany
Publisher	IEEE
Pages	176-179
Publication status	Published - 1996
Publication type	B3 Article in conference proceedings

Publication forum classification

@inproceedings{9212a6e9494f408f866270d426fa4102,

title = "Aluminium free GaInAsP/GaAs lasers of 808 nm wavelength range by Gas Source MBE",

author = "J. Aarik and A. Ovtchinnikov and H. Asonen",

note = "Contribution: organisation=fys,FACT1=1",

year = "1996",

language = "English",

pages = "176--179",

booktitle = "Eight International Conference on Indium Phosphide and Related Materials, Schw{\"a}bisch-Gm{\"u}nd, Germany, April 21-25, 1996",

publisher = "IEEE",

address = "United States",

}

Aluminium free GaInAsP/GaAs lasers of 808 nm wavelength range by Gas Source MBE. / Aarik, J.; Ovtchinnikov, A.; Asonen, H.
Eight International Conference on Indium Phosphide and Related Materials, Schwäbisch-Gmünd, Germany, April 21-25, 1996. Germany: IEEE, 1996. p. 176-179.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific

TY - GEN

T1 - Aluminium free GaInAsP/GaAs lasers of 808 nm wavelength range by Gas Source MBE

AU - Aarik, J.

AU - Ovtchinnikov, A.

AU - Asonen, H.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1996

Y1 - 1996

M3 - Conference contribution

SP - 176

EP - 179

BT - Eight International Conference on Indium Phosphide and Related Materials, Schwäbisch-Gmünd, Germany, April 21-25, 1996

PB - IEEE

CY - Germany

ER -