Analysis of the biasing conditions and latching operation for Si/SiGe resonant interband tunnel diode based tunneling SRAM

S. Sudirgo, D. J. Pawlik, S. L. Rommel, S. K. Kurinec, P. E. Thompson, P. R. Berger

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)
Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
PublisherIEEE
Pages334-335
Number of pages2
ISBN (Print)1424400848, 9781424400843
DOIs
Publication statusPublished - 2005
Externally publishedYes
Publication typeA4 Article in conference proceedings
EventInternational Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 7 Dec 20059 Dec 2005

Conference

ConferenceInternational Semiconductor Device Research Symposium
Country/TerritoryUnited States
CityBethesda, MD
Period7/12/059/12/05

ASJC Scopus subject areas

  • General Engineering

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