Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

R. Krom; D. J. Pawlik; S. Muhkerjee; S. Pandharpure; S. K. Kurinec; S. Y. Park; R. Yu; R. Anisha; P. R. Berger; P. E. Thompson; S. L. Rommel

doi:10.1109/ISDRS.2007.4422468

Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

R. Krom^*
, D. J. Pawlik
, S. Muhkerjee
, S. Pandharpure
, S. K. Kurinec
, S. Y. Park
, R. Yu
, R. Anisha
, P. R. Berger
, P. E. Thompson
, S. L. Rommel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Abstract

This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (J P ) and PVCR up to 2.97 kA/cm 2 and 3.08, respectively.

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
Publisher	IEEE
ISBN (Print)	1424418917, 9781424418916
DOIs	https://doi.org/10.1109/ISDRS.2007.4422468
Publication status	Published - 2007
Externally published	Yes
Publication type	A4 Article in conference proceedings
Event	International Semiconductor Device Research Symposium - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Conference

Conference	International Semiconductor Device Research Symposium
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ISDRS.2007.4422468

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Krom, R., Pawlik, D. J., Muhkerjee, S., Pandharpure, S., Kurinec, S. K., Park, S. Y., Yu, R., Anisha, R., Berger, P. R., Thompson, P. E., & Rommel, S. L. (2007). Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422468 IEEE. https://doi.org/10.1109/ISDRS.2007.4422468

@inproceedings{940d636a0dc04cc5a0530ace5f954121,

title = "Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy",

abstract = "This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (J P ) and PVCR up to 2.97 kA/cm 2 and 3.08, respectively.",

author = "R. Krom and Pawlik, \{D. J.\} and S. Muhkerjee and S. Pandharpure and Kurinec, \{S. K.\} and Park, \{S. Y.\} and R. Yu and R. Anisha and Berger, \{P. R.\} and Thompson, \{P. E.\} and Rommel, \{S. L.\}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422468",

language = "English",

isbn = "1424418917",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

publisher = "IEEE",

address = "United States",

}

Krom, R, Pawlik, DJ, Muhkerjee, S, Pandharpure, S, Kurinec, SK, Park, SY, Yu, R, Anisha, R, Berger, PR, Thompson, PE & Rommel, SL 2007, Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422468, IEEE, International Semiconductor Device Research Symposium, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422468

TY - GEN

T1 - Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

AU - Krom, R.

AU - Pawlik, D. J.

AU - Muhkerjee, S.

AU - Pandharpure, S.

AU - Kurinec, S. K.

AU - Park, S. Y.

AU - Yu, R.

AU - Anisha, R.

AU - Berger, P. R.

AU - Thompson, P. E.

AU - Rommel, S. L.

PY - 2007

Y1 - 2007

N2 - This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (J P ) and PVCR up to 2.97 kA/cm 2 and 3.08, respectively.

AB - This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (J P ) and PVCR up to 2.97 kA/cm 2 and 3.08, respectively.

U2 - 10.1109/ISDRS.2007.4422468

DO - 10.1109/ISDRS.2007.4422468

M3 - Conference contribution

AN - SCOPUS:44949239614

SN - 1424418917

SN - 9781424418916

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

PB - IEEE

T2 - International Semiconductor Device Research Symposium

Y2 - 12 December 2007 through 14 December 2007

ER -

Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Abstract

Conference

ASJC Scopus subject areas

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