Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy

J. Dekker, A. Tukiainen, N. Xiang, S. Orsila, M. Saarinen, M. Toivonen, M. Pessa, N. Tkachenko, H. Lemmetyinen

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Translated title of the contribution	Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy
Original language	English
Pages (from-to)	3709-3713
Journal	Journal of Applied Physics
Volume	86
Issue number	7
Publication status	Published - 1999
Publication type	A1 Journal article-refereed

Publication forum classification

@article{228ce331f29e4d71804bf7eac6202b99,

title = "Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy",

author = "J. Dekker and A. Tukiainen and N. Xiang and S. Orsila and M. Saarinen and M. Toivonen and M. Pessa and N. Tkachenko and H. Lemmetyinen",

note = "1. laitos fys<br/>Contribution: organisation=fys orc,FACT1=0.5<br/>Contribution: organisation=kem,FACT2=0.5",

year = "1999",

language = "English",

volume = "86",

pages = "3709--3713",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy

AU - Dekker, J.

AU - Tukiainen, A.

AU - Xiang, N.

AU - Orsila, S.

AU - Saarinen, M.

AU - Toivonen, M.

AU - Pessa, M.

AU - Tkachenko, N.

AU - Lemmetyinen, H.

N1 - 1. laitos fys<br/>Contribution: organisation=fys orc,FACT1=0.5<br/>Contribution: organisation=kem,FACT2=0.5

PY - 1999

Y1 - 1999

M3 - Article

SN - 0021-8979

VL - 86

SP - 3709

EP - 3713

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -