Anomalous Effects of Lamp Annealing in Modulation-Doped In0.53Ga 0.47As/In0.52Al 0.4gAs and Si-Implanted In0.53Ga0.47As

K.S. Seo, P.R. Berger, P.K. Bhattacharya

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	235-240
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/T-ED.1987.22912
Publication status	Published - 1987
Externally published	Yes
Publication type	A1 Journal article-refereed

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title = "Anomalous Effects of Lamp Annealing in Modulation-Doped In0.53Ga 0.47As/In0.52Al 0.4gAs and Si-Implanted In0.53Ga0.47As",

author = "K.S. Seo and P.R. Berger and P.K. Bhattacharya",

year = "1987",

doi = "10.1109/T-ED.1987.22912",

language = "English",

volume = "34",

pages = "235--240",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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TY - JOUR

T1 - Anomalous Effects of Lamp Annealing in Modulation-Doped In0.53Ga 0.47As/In0.52Al 0.4gAs and Si-Implanted In0.53Ga0.47As

AU - Seo, K.S.

AU - Berger, P.R.

AU - Bhattacharya, P.K.

PY - 1987

Y1 - 1987

U2 - 10.1109/T-ED.1987.22912

DO - 10.1109/T-ED.1987.22912

M3 - Article

SN - 0018-9383

VL - 34

SP - 235

EP - 240

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -