Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

M.A. Gosalvez, A.S. Foster, R.M. Nieminen

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Translated title of the contribution	Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon
Original language	English
Pages (from-to)	160-182
Journal	Applied Surface Science
Volume	202
Issue number	3-4
DOIs	https://doi.org/10.1016/S0169-4332(02)00903-0
Publication status	Published - 2002
Externally published	Yes
Publication type	A1 Journal article-refereed

Publication forum classification

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title = "Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon",

author = "M.A. Gosalvez and A.S. Foster and R.M. Nieminen",

note = "Contribution: organisation=fys,FACT1=1",

year = "2002",

doi = "10.1016/S0169-4332(02)00903-0",

language = "English",

volume = "202",

pages = "160--182",

journal = "Applied Surface Science",

issn = "0169-4332",

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}

TY - JOUR

T1 - Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

AU - Gosalvez, M.A.

AU - Foster, A.S.

AU - Nieminen, R.M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 2002

Y1 - 2002

U2 - 10.1016/S0169-4332(02)00903-0

DO - 10.1016/S0169-4332(02)00903-0

M3 - Article

SN - 0169-4332

VL - 202

SP - 160

EP - 182

JO - Applied Surface Science

JF - Applied Surface Science

IS - 3-4

ER -