Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

Al Sameen T. Khan; Paul R. Berger; Fernando J. Guarin; Subramanian S. Iyer

doi:10.1063/1.116437

Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

Al Sameen T. Khan, Paul R. Berger, Fernando J. Guarin, Subramanian S. Iyer

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Abstract

Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.

Original language	English
Pages (from-to)	3105-3107
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	22
DOIs	https://doi.org/10.1063/1.116437
Publication status	Published - 1996
Publication type	A1 Journal article-refereed

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy",

abstract = "Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.",

author = "Khan, {Al Sameen T.} and Berger, {Paul R.} and Guarin, {Fernando J.} and Iyer, {Subramanian S.}",

year = "1996",

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pages = "3105--3107",

journal = "Applied Physics Letters",

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T1 - Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

AU - Khan, Al Sameen T.

AU - Berger, Paul R.

AU - Guarin, Fernando J.

AU - Iyer, Subramanian S.

PY - 1996

Y1 - 1996

N2 - Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.

AB - Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.

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Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

Abstract

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