Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

Al Sameen T. Khan, Paul R. Berger, Fernando J. Guarin, Subramanian S. Iyer

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    15 Citations (Scopus)


    Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.

    Original languageEnglish
    Pages (from-to)3105-3107
    Number of pages3
    JournalApplied Physics Letters
    Issue number22
    Publication statusPublished - 1996
    Publication typeA1 Journal article-refereed

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


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