Translated title of the contribution | Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy |
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Original language | English |
Pages (from-to) | 459-462 |
Journal | Journal of Crystal Growth |
Volume | 209 |
Publication status | Published - 2000 |
Publication type | A1 Journal article-refereed |
Publication forum classification
- No publication forum level