Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications

Giannis Giannoulis; Ville-Markus Korpijärvi; Nikos Iliadis; Jaakko Mäkelä; Jukka Viheriälä; Dimitrios Apostolopoulos; Mircea Guina; Hercules Avramopoulos

doi:10.1109/LPT.2015.2436697

Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications

Giannis Giannoulis, Ville-Markus Korpijärvi, Nikos Iliadis, Jaakko Mäkelä, Jukka Viheriälä, Dimitrios Apostolopoulos, Mircea Guina, Hercules Avramopoulos

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion of 10-Gb/s signals is reported. A maximum power penalty of <2.4 dB for return to zero formatting and of 1.9 dB for nonreturn to zero is demonstrated.

Original language	English
Article number	7113825
Pages (from-to)	1691-1694
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2015.2436697
Publication status	Published - 15 Aug 2015
Publication type	A1 Journal article-refereed

Keywords

dilute nitrides
Photonic integration
semiconductor optical amplifier (SOA)
wavelength conversion

Publication forum classification

Publication forum level 2

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

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10.1109/LPT.2015.2436697

Cite this

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title = "Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications",

abstract = "We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion of 10-Gb/s signals is reported. A maximum power penalty of <2.4 dB for return to zero formatting and of 1.9 dB for nonreturn to zero is demonstrated.",

keywords = "dilute nitrides, Photonic integration, semiconductor optical amplifier (SOA), wavelength conversion",

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doi = "10.1109/LPT.2015.2436697",

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T1 - Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications

AU - Giannoulis, Giannis

AU - Korpijärvi, Ville-Markus

AU - Iliadis, Nikos

AU - Mäkelä, Jaakko

AU - Viheriälä, Jukka

AU - Apostolopoulos, Dimitrios

AU - Guina, Mircea

AU - Avramopoulos, Hercules

PY - 2015/8/15

Y1 - 2015/8/15

N2 - We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion of 10-Gb/s signals is reported. A maximum power penalty of <2.4 dB for return to zero formatting and of 1.9 dB for nonreturn to zero is demonstrated.

AB - We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion of 10-Gb/s signals is reported. A maximum power penalty of <2.4 dB for return to zero formatting and of 1.9 dB for nonreturn to zero is demonstrated.

KW - dilute nitrides

KW - Photonic integration

KW - semiconductor optical amplifier (SOA)

KW - wavelength conversion

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U2 - 10.1109/LPT.2015.2436697

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

M1 - 7113825

ER -

Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications

Abstract

Keywords

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