Abstract
We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion of 10-Gb/s signals is reported. A maximum power penalty of <2.4 dB for return to zero formatting and of 1.9 dB for nonreturn to zero is demonstrated.
| Original language | English |
|---|---|
| Article number | 7113825 |
| Pages (from-to) | 1691-1694 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 27 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 15 Aug 2015 |
| Publication type | A1 Journal article-refereed |
Keywords
- dilute nitrides
- Photonic integration
- semiconductor optical amplifier (SOA)
- wavelength conversion
Publication forum classification
- Publication forum level 2
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
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