Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

Capucine Tong; Thomas Bidaud; Eero Koivusalo; Marcelo Rizzo Piton; Mircea Guina; Helder Vinicius Avanço Galeti; Yara Galvão Gobato; Andrea Cattoni; Teemu Hakkarainen; Stéphane Collin

doi:10.1088/1361-6528/ac4d58

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

Capucine Tong, Thomas Bidaud, Eero Koivusalo, Marcelo Rizzo Piton, Mircea Guina, Helder Vinicius Avanço Galeti, Yara Galvão Gobato, Andrea Cattoni, Teemu Hakkarainen, Stéphane Collin

Physics

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

4 Downloads (Pure)

Abstract

Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

Original language	English
Number of pages	13
Journal	Nanotechnology
Volume	33
Issue number	18
DOIs	https://doi.org/10.1088/1361-6528/ac4d58
Publication status	Published - 10 Feb 2022
Publication type	A1 Journal article-refereed

Keywords

cathodoluminescence
doping
electron concentrations
GaAs
MBE
nanowires

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Publication forum level 2

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/1361-6528/ac4d58

Cathodoluminescence_mapping_of_electron_concentrationAccepted author manuscript, 7.34 MBLicence: CC BY-NC-ND

https://urn.fi/URN:NBN:fi:tuni-202212098999Licence: CC BY-NC-ND

Cite this

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title = "Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires",

abstract = "Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.",

keywords = "cathodoluminescence, doping, electron concentrations, GaAs, MBE, nanowires",

author = "Capucine Tong and Thomas Bidaud and Eero Koivusalo and {Rizzo Piton}, Marcelo and Mircea Guina and Galeti, {Helder Vinicius Avan{\c c}o} and {Galv{\~a}o Gobato}, Yara and Andrea Cattoni and Teemu Hakkarainen and St{\'e}phane Collin",

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day = "10",

doi = "10.1088/1361-6528/ac4d58",

language = "English",

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TY - JOUR

T1 - Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

AU - Tong, Capucine

AU - Bidaud, Thomas

AU - Koivusalo, Eero

AU - Rizzo Piton, Marcelo

AU - Guina, Mircea

AU - Galeti, Helder Vinicius Avanço

AU - Galvão Gobato, Yara

AU - Cattoni, Andrea

AU - Hakkarainen, Teemu

AU - Collin, Stéphane

PY - 2022/2/10

Y1 - 2022/2/10

N2 - Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

AB - Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

KW - cathodoluminescence

KW - doping

KW - electron concentrations

KW - GaAs

KW - MBE

KW - nanowires

U2 - 10.1088/1361-6528/ac4d58

DO - 10.1088/1361-6528/ac4d58

M3 - Article

C2 - 35051915

AN - SCOPUS:85124498499

SN - 0957-4484

VL - 33

JO - Nanotechnology

JF - Nanotechnology

IS - 18

ER -

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires

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Keywords

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