Challenges in integration of resonant interband tunnel devices with CMOS

Stephen Sudirgo, Branislav Curanovic, Sean L. Rommel, Karl D. Hirschman, Santosh K. Kurinec, Niu Jin, Anthony T. Rice, Paul R. Berger, Phillip E. Thompson

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

3 Citations (Scopus)


The fabrication of SiGe Resonant Interband Tunnel Devices (RITD) using CMOS compatible processes requires ability to form RITD structures selectively on source/drain regions. Various approaches were investigated and RITDs have been realized in lithographically defined openings in oxide on Si wafers. Patterned growth RITD on p+ Si exhibited a peak-to-valley current ratio (PVCR) of 3.0 and peak current density (JP) of 188 A/cm2 whereas RITD on p+ implanted regions resulted in a PVCR of 2.5 with JP of 278 A/cm2. Blanket growth RITD on p+ implanted substrate yielded a superior PCVR of 3.3 and JP of 332 A/cm2. The observed effects of patterned growth and implanted substrate on the RITD device performance are critical challenges addressed in this study for RITD-CMOS integration.

Original languageEnglish
Title of host publicationProceedings of the 15th Biennial University/Government/Industry Microelectronics Symposium
Number of pages4
ISBN (Print)0-7803-7972-1
Publication statusPublished - 2003
Externally publishedYes
Publication typeA4 Article in conference proceedings
Event15th Biennial University/Government/Industry Microelectronics Symposium - Boise, ID, United States
Duration: 30 Jun 20032 Jul 2003

Publication series

NameBiennial University/Government/Industry Microelectronics Symposium - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISSN (Print)0749-6877


Conference15th Biennial University/Government/Industry Microelectronics Symposium
Country/TerritoryUnited States
CityBoise, ID


  • CMOS integration
  • Resonant Interband Tunneling Diodes (RITD)
  • Resonant Tunneling Devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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