Characteristics and growth of stained-layer InGaAs/GaInAsP/GaInP quantum well lasers

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Translated title of the contribution	Characteristics and growth of stained-layer InGaAs/GaInAsP/GaInP quantum well lasers
Original language	English
Pages (from-to)	293-299
Journal	Mat. Res. Soc. Symp. Proc.
Volume	281
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

Publication forum classification

@article{ce56e512d8614e69a64b85793604a24c,

title = "Characteristics and growth of stained-layer InGaAs/GaInAsP/GaInP quantum well lasers",

author = "G. Zhang and A. Ovtchinnikov and J. N{\"a}ppi and H. Asonen",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "281",

pages = "293--299",

journal = "Mat. Res. Soc. Symp. Proc.",

}