Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers

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Translated title of the contribution	Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers
Original language	English
Pages (from-to)	605-612
Journal	Applied Physics B-Lasers and Optics
Volume	106
Issue number	3
DOIs	https://doi.org/10.1007/s00340-011-4697-7
Publication status	Published - 2012
Publication type	A1 Journal article-refereed

Publication forum classification

@article{c3bdf6193e1d4bf8bfdfce47ab955497,

title = "Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers",

author = "F. Sch{\"a}ttiger and D. Bauer and J. Demsar and T. Dekorsky and J. Kleinbauer and D.H. Sutter and Janne Puustinen and Mircea Guina",

note = "Contribution: organisation=orc,FACT1=1<br/>Publisher name: Springer",

year = "2012",

doi = "10.1007/s00340-011-4697-7",

language = "English",

volume = "106",

pages = "605--612",

journal = "Applied Physics B-Lasers and Optics",

issn = "0946-2171",

publisher = "Springer Verlag",

number = "3",

}

TY - JOUR

T1 - Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers

AU - Schättiger, F.

AU - Bauer, D.

AU - Demsar, J.

AU - Dekorsky, T.

AU - Kleinbauer, J.

AU - Sutter, D.H.

AU - Puustinen, Janne

AU - Guina, Mircea

N1 - Contribution: organisation=orc,FACT1=1<br/>Publisher name: Springer

PY - 2012

Y1 - 2012

U2 - 10.1007/s00340-011-4697-7

DO - 10.1007/s00340-011-4697-7

M3 - Article

SN - 0946-2171

VL - 106

SP - 605

EP - 612

JO - Applied Physics B-Lasers and Optics

JF - Applied Physics B-Lasers and Optics

IS - 3

ER -