Characterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences

Tomi Roinila, Xiao Yu, Anran Gao, Tie Li, Jarmo Verho, Matti Vilkko, Pasi Kallio, Yuelin Wang, Jukka Lekkala

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    3 Citations (Scopus)
    Translated title of the contributionCharacterizing leakage current in silicon nanowire-based field-effect transistors by applying pseudo-random sequences
    Original languageEnglish
    Title of host publicationProceedings of Second International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 29 Aug. - 1 Sept. 2012, Xi'an, China
    PublisherChangchun University of Science and Technology
    Pages1-5
    Number of pages5
    ISBN (Electronic)978-1-4673-4589-7
    ISBN (Print)978-1-4673-4588-0
    Publication statusPublished - 2012
    Publication typeA4 Article in conference proceedings

    Publication series

    NameInternational Conference on Manipulation, Manufacturing and Measurement on the Nanoscale

    Publication forum classification

    • Publication forum level 1

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