Combined MBE-MOCVD process for high-efficiency multijunction solar cells

Antti Tukiainen, Arto Aho, Gabriele Gori, Ville Polojärvi, Mariacristina Casale, Erminio Greco, Riku Isoaho, Timo Aho, Marianna Raappana, Roberta Campesato, Mircea Guina

    Research output: Other conference contributionPaper, poster or abstractScientific

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    Abstract

    We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.
    Original languageEnglish
    Publication statusPublished - 2016
    EventMBE2016 19th International Conference on Molecular Beam Epitaxy - Montpellier, France
    Duration: 4 Sep 20169 Sep 2016
    https://mbe2016.sciencesconf.org/

    Conference

    ConferenceMBE2016 19th International Conference on Molecular Beam Epitaxy
    Abbreviated titleMBE2016
    CountryFrance
    CityMontpellier
    Period4/09/169/09/16
    Internet address

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