Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots

E. I. Moiseev, M. V. Maximov, N. V. Kryzhanovskaya, O. I. Simchuk, M. M. Kulagina, S. A. Kadinskaya, M. Guina, A. E. Zhukov

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

Abstract: The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots are presented. It is found that microlasers of a comparable size with quantum wells possess a larger laser generation threshold when compared with microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of emitted power corresponding to laser modes. The jump to lasing via an excited-state optical transition is also characteristic for them. Microdisk lasers based on InGaAsN alloy do not have these disadvantages.

Original languageEnglish
Pages (from-to)263-267
Number of pages5
JournalSemiconductors
Volume54
Issue number2
DOIs
Publication statusPublished - 1 Feb 2020
Publication typeA1 Journal article-refereed

Keywords

  • microlaser
  • nitrogen-containing semiconductors
  • quantum dots
  • quantum wells

Publication forum classification

  • Publication forum level 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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