Comparing morphology studies of GaAs quantum dots grown by droplet epitaxy on GaInP and GaAs

A. Schramm, A. Tukiainen, A. Aho, M. Pessa

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5 Citations (Scopus)

Translated title of the contribution	Comparing morphology studies of GaAs quantum dots grown by droplet epitaxy on GaInP and GaAs
Original language	English
Pages (from-to)	2317-2320
Journal	Journal of Crystal Growth
Volume	311
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.02.002
Publication status	Published - 2009
Publication type	A1 Journal article-refereed

Publication forum classification

@article{d55c278f31124417be3b7c96faf60fa2,

title = "Comparing morphology studies of GaAs quantum dots grown by droplet epitaxy on GaInP and GaAs",

author = "A. Schramm and A. Tukiainen and A. Aho and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2009",

doi = "10.1016/j.jcrysgro.2009.02.002",

language = "English",

volume = "311",

pages = "2317--2320",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - Comparing morphology studies of GaAs quantum dots grown by droplet epitaxy on GaInP and GaAs

AU - Schramm, A.

AU - Tukiainen, A.

AU - Aho, A.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2009

Y1 - 2009

U2 - 10.1016/j.jcrysgro.2009.02.002

DO - 10.1016/j.jcrysgro.2009.02.002

M3 - Article

VL - 311

SP - 2317

EP - 2320

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 8

ER -