Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells

Antti Tukiainen, Jari Lyytikäinen, Timo Aho, Eero Halonen, Marianna Raappana, Federica Cappelluti, Mircea Guina

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    2 Citations (Scopus)
    11 Downloads (Pure)

    Abstract

    We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. ‘Shallow’ and ‘deep’ junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the ‘shallow’ junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots.
    Original languageEnglish
    Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
    Subtitle of host publicationA Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC
    PublisherIEEE
    Pages2950-2952
    Number of pages3
    ISBN (Electronic)978-1-5386-8529-7
    DOIs
    Publication statusPublished - Nov 2018
    Publication typeA4 Article in conference proceedings
    EventWorld Conference on Photovoltaic Energy Conversion -
    Duration: 5 Dec 1994 → …

    Publication series

    NameCONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
    PublisherIEEE
    ISSN (Print)0160-8371

    Conference

    ConferenceWorld Conference on Photovoltaic Energy Conversion
    Period5/12/94 → …

    Publication forum classification

    • Publication forum level 1

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