Concentration of interstitial and substitutional nitrogen in GaNxAs1-x

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Translated title of the contribution	Concentration of interstitial and substitutional nitrogen in GaNxAs1-x
Original language	English
Pages (from-to)	2314-2316
Journal	Applied Physics Letters
Volume	80
Issue number	13
Publication status	Published - 2002
Publication type	A1 Journal article-refereed

Publication forum classification

@article{d94bd83f700d4e7695b95dbdfd30905e,

title = "Concentration of interstitial and substitutional nitrogen in GaNxAs1-x",

author = "T. Ahlgren and E. Vainonen-Ahlgren and J. Likonen and W. Li and M. Pessa",

note = "Contribution: organisation=orc,FACT1=1",

year = "2002",

language = "English",

volume = "80",

pages = "2314--2316",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}