Constant Capacitance-DLTS on InAs-Quantum Dots embedded in Schottkydiodes

A. Schramm, J. Schaefer, S. Schulz, W. Hansen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Translated title of the contribution	Constant Capacitance-DLTS on InAs-Quantum Dots embedded in Schottkydiodes
Original language	English
Title of host publication	28th International Conference on the Physics of Semiconductors, July 24 - 28, 2006, Vienna, Austria
Publication status	Published - 2006
Externally published	Yes
Publication type	A4 Article in conference proceedings

Publication forum classification

@inproceedings{4fcb48964bda47c8b70b32839c3c1fa4,

title = "Constant Capacitance-DLTS on InAs-Quantum Dots embedded in Schottkydiodes",

author = "A. Schramm and J. Schaefer and S. Schulz and W. Hansen",

note = "WeA2k.58<br/>Contribution: organisation=orc,FACT1=1",

year = "2006",

language = "English",

booktitle = "28th International Conference on the Physics of Semiconductors, July 24 - 28, 2006, Vienna, Austria",

}

TY - GEN

T1 - Constant Capacitance-DLTS on InAs-Quantum Dots embedded in Schottkydiodes

AU - Schramm, A.

AU - Schaefer, J.

AU - Schulz, S.

AU - Hansen, W.

N1 - WeA2k.58<br/>Contribution: organisation=orc,FACT1=1

PY - 2006

Y1 - 2006

M3 - Conference contribution

BT - 28th International Conference on the Physics of Semiconductors, July 24 - 28, 2006, Vienna, Austria

ER -