Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection

Si Young Park; Ronghua Yu; Sung Yong Chung; Paul R. Berger; Phillip E. Thompson; Patrick Fay

doi:10.1109/DRC.2007.4373694

Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection

Si Young Park, Ronghua Yu, Sung Yong Chung, Paul R. Berger, Phillip E. Thompson, Patrick Fay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Abstract

We report the first directly-measured sensitivity performance of a zero-bias Si-based heterojunction backward detector, which is readily compatible with mainstream silicon technology. A measured sensitivity of 2376 V/W driven from a 50 Omega source at zero-bias has been obtained. A cutoff frequency of 1.8 GHz was extracted with a series resistance of 290 Omega and a junction capacitance of 0.307 pF using a small signal model established to fit the measured S-parameters for a 5 mum diameter mesa device.

Original language	English
Title of host publication	2007 65th DRC Device Research Conference
Publisher	IEEE
Pages	153-154
Number of pages	2
ISBN (Print)	1424411025, 9781424411023
DOIs	https://doi.org/10.1109/DRC.2007.4373694
Publication status	Published - 2007
Externally published	Yes
Publication type	A4 Article in conference proceedings
Event	Device Research Conference - South Bend, India Duration: 18 Jun 2007 → 20 Jun 2007

Publication series

Name	Device Research Conference
ISSN (Print)	1548-3770

Conference

Conference	Device Research Conference
Country/Territory	India
City	South Bend
Period	18/06/07 → 20/06/07

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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10.1109/DRC.2007.4373694

Cite this

@inproceedings{83aef35f7a0441e89e0f29dd517d556e,

title = "Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection",

abstract = "We report the first directly-measured sensitivity performance of a zero-bias Si-based heterojunction backward detector, which is readily compatible with mainstream silicon technology. A measured sensitivity of 2376 V/W driven from a 50 Omega source at zero-bias has been obtained. A cutoff frequency of 1.8 GHz was extracted with a series resistance of 290 Omega and a junction capacitance of 0.307 pF using a small signal model established to fit the measured S-parameters for a 5 mum diameter mesa device.",

author = "Park, {Si Young} and Ronghua Yu and Chung, {Sung Yong} and Berger, {Paul R.} and Thompson, {Phillip E.} and Patrick Fay",

year = "2007",

doi = "10.1109/DRC.2007.4373694",

language = "English",

isbn = "1424411025",

series = "Device Research Conference",

publisher = "IEEE",

pages = "153--154",

booktitle = "2007 65th DRC Device Research Conference",

}

TY - GEN

T1 - Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection

AU - Park, Si Young

AU - Yu, Ronghua

AU - Chung, Sung Yong

AU - Berger, Paul R.

AU - Thompson, Phillip E.

AU - Fay, Patrick

PY - 2007

Y1 - 2007

N2 - We report the first directly-measured sensitivity performance of a zero-bias Si-based heterojunction backward detector, which is readily compatible with mainstream silicon technology. A measured sensitivity of 2376 V/W driven from a 50 Omega source at zero-bias has been obtained. A cutoff frequency of 1.8 GHz was extracted with a series resistance of 290 Omega and a junction capacitance of 0.307 pF using a small signal model established to fit the measured S-parameters for a 5 mum diameter mesa device.

AB - We report the first directly-measured sensitivity performance of a zero-bias Si-based heterojunction backward detector, which is readily compatible with mainstream silicon technology. A measured sensitivity of 2376 V/W driven from a 50 Omega source at zero-bias has been obtained. A cutoff frequency of 1.8 GHz was extracted with a series resistance of 290 Omega and a junction capacitance of 0.307 pF using a small signal model established to fit the measured S-parameters for a 5 mum diameter mesa device.

U2 - 10.1109/DRC.2007.4373694

DO - 10.1109/DRC.2007.4373694

M3 - Conference contribution

AN - SCOPUS:47249128664

SN - 1424411025

SN - 9781424411023

T3 - Device Research Conference

SP - 153

EP - 154

BT - 2007 65th DRC Device Research Conference

PB - IEEE

T2 - Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -

Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection

Abstract

Publication series

Conference

ASJC Scopus subject areas

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