Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection

Si Young Park, Ronghua Yu, Sung Yong Chung, Paul R. Berger, Phillip E. Thompson, Patrick Fay

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

We report the first directly-measured sensitivity performance of a zero-bias Si-based heterojunction backward detector, which is readily compatible with mainstream silicon technology. A measured sensitivity of 2376 V/W driven from a 50 Omega source at zero-bias has been obtained. A cutoff frequency of 1.8 GHz was extracted with a series resistance of 290 Omega and a junction capacitance of 0.307 pF using a small signal model established to fit the measured S-parameters for a 5 mum diameter mesa device.
Original languageEnglish
Title of host publication2007 65th DRC Device Research Conference
PublisherIEEE
Pages153-154
Number of pages2
ISBN (Print)1424411025, 9781424411023
DOIs
Publication statusPublished - 2007
Externally publishedYes
Publication typeA4 Article in a conference publication
EventDevice Research Conference - South Bend, India
Duration: 18 Jun 200720 Jun 2007

Publication series

NameDevice Research Conference
ISSN (Print)1548-3770

Conference

ConferenceDevice Research Conference
Country/TerritoryIndia
CitySouth Bend
Period18/06/0720/06/07

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection'. Together they form a unique fingerprint.

Cite this