Dependence of the anisotropy of wet chemical etching of silicon on the amount of surface coverage by OH radicals

M.A. Gosalvez, A.S. Foster, R.M. Nieminen

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Translated title of the contribution	Dependence of the anisotropy of wet chemical etching of silicon on the amount of surface coverage by OH radicals
Original language	English
Pages (from-to)	53-65
Journal	Sensors and Materials
Volume	15
Issue number	2
Publication status	Published - 2003
Externally published	Yes
Publication type	A1 Journal article-refereed

Publication forum classification

@article{074981c2538c4b3eb3912323f410d577,

title = "Dependence of the anisotropy of wet chemical etching of silicon on the amount of surface coverage by OH radicals",

author = "M.A. Gosalvez and A.S. Foster and R.M. Nieminen",

note = "Contribution: organisation=fys,FACT1=1",

year = "2003",

language = "English",

volume = "15",

pages = "53--65",

journal = "Sensors and Materials",

issn = "0914-4935",

publisher = "M Y U Scientific Publishing Division",

number = "2",

}