Dependence of the anisotropy of wet chemical etching of silicon on the amount of surface coverage by OH radicals

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Translated title of the contribution	Dependence of the anisotropy of wet chemical etching of silicon on the amount of surface coverage by OH radicals
Original language	English
Pages (from-to)	53-65
Journal	Sensors and Materials
Volume	15
Issue number	2
Publication status	Published - 2003
Externally published	Yes
Publication type	A1 Journal article-refereed

Publication forum classification

@article{074981c2538c4b3eb3912323f410d577,

title = "Dependence of the anisotropy of wet chemical etching of silicon on the amount of surface coverage by OH radicals",

author = "M.A. Gosalvez and A.S. Foster and R.M. Nieminen",

note = "Contribution: organisation=fys,FACT1=1",

year = "2003",

language = "English",

volume = "15",

pages = "53--65",

journal = "Sensors and Materials",

issn = "0914-4935",

publisher = "M Y U Scientific Publishing Division",

number = "2",

}