| Translated title of the contribution | Depth profiles of defects in CdTe (100) overlayers grown by molecular beam epitaxy on GaAs(100) |
|---|---|
| Original language | English |
| Pages (from-to) | 973-974 |
| Journal | Applied Physics Letters |
| Volume | 51 |
| Issue number | 13 |
| Publication status | Published - 1987 |
| Publication type | A1 Journal article-refereed |
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