Design and Implementation of a single switch high gain boost topology: Structure, Ripple Control and ZCS

Mohammad Farsijani; Sohrab Abbasian; Hossein Hafezi; Mohammad Tavakoli Bina; Karim Abbaszadeh

doi:10.1109/ACCESS.2022.3233920

Design and Implementation of a single switch high gain boost topology: Structure, Ripple Control and ZCS

Mohammad Farsijani, Sohrab Abbasian, Hossein Hafezi, Mohammad Tavakoli Bina, Karim Abbaszadeh

Electrical Engineering

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The need for high gain DC-DC converters has lately increased in tandem with the utilization of renewable energy supplies. Particularly appealing are high gain converters that do not require the inclusion of extra power switches and/or other passive elements to the system. As a result, this study proposes a non-isolated single switch converter with ultra-high voltage gain (UHG) that is appropriate for most renewable energy conversion systems, like solar installations. With only a single MOSFET working within a suitable duty cycle region, the proposed converter provides significant voltage gain and around 95% efficiency. Moreover, the MOSFET in this UHG converter is turned on in zero current switching (ZCS) mode, resolving the diode recovery issue. The recommended UHG converter’s working modes, steady-state parametric study, circuit variables like voltage stress on switching devices, and converter gain are all thoroughly explained. Comparisons have been done with comparable topologies presented in the literature, and lastly, experimental results depending on 200W (20V input, 320V output voltage) are given to validate the operation of the proposed UHG design.

Original language	English
Pages (from-to)	2092-2104
Number of pages	13
Journal	IEEE Access
Volume	11
DOIs	https://doi.org/10.1109/ACCESS.2022.3233920
Publication status	Published - 2023
Publication type	A1 Journal article-refereed

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10.1109/ACCESS.2022.3233920Licence: CC BY

Design and Implementation of a single switch high gain boost topologyFinal published version, 2.64 MBLicence: CC BY

https://urn.fi/URN:NBN:fi:tuni-202304043439Licence: CC BY

Cite this

@article{4a36a504835c436f9b9c376826cec1a6,

title = "Design and Implementation of a single switch high gain boost topology: Structure, Ripple Control and ZCS",

abstract = "The need for high gain DC-DC converters has lately increased in tandem with the utilization of renewable energy supplies. Particularly appealing are high gain converters that do not require the inclusion of extra power switches and/or other passive elements to the system. As a result, this study proposes a non-isolated single switch converter with ultra-high voltage gain (UHG) that is appropriate for most renewable energy conversion systems, like solar installations. With only a single MOSFET working within a suitable duty cycle region, the proposed converter provides significant voltage gain and around 95% efficiency. Moreover, the MOSFET in this UHG converter is turned on in zero current switching (ZCS) mode, resolving the diode recovery issue. The recommended UHG converter{\textquoteright}s working modes, steady-state parametric study, circuit variables like voltage stress on switching devices, and converter gain are all thoroughly explained. Comparisons have been done with comparable topologies presented in the literature, and lastly, experimental results depending on 200W (20V input, 320V output voltage) are given to validate the operation of the proposed UHG design.",

author = "Mohammad Farsijani and Sohrab Abbasian and Hossein Hafezi and Bina, {Mohammad Tavakoli} and Karim Abbaszadeh",

year = "2023",

doi = "10.1109/ACCESS.2022.3233920",

language = "English",

volume = "11",

pages = "2092--2104",

journal = "IEEE Access",

issn = "2169-3536",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Design and Implementation of a single switch high gain boost topology

T2 - Structure, Ripple Control and ZCS

AU - Farsijani, Mohammad

AU - Abbasian, Sohrab

AU - Hafezi, Hossein

AU - Bina, Mohammad Tavakoli

AU - Abbaszadeh, Karim

PY - 2023

Y1 - 2023

N2 - The need for high gain DC-DC converters has lately increased in tandem with the utilization of renewable energy supplies. Particularly appealing are high gain converters that do not require the inclusion of extra power switches and/or other passive elements to the system. As a result, this study proposes a non-isolated single switch converter with ultra-high voltage gain (UHG) that is appropriate for most renewable energy conversion systems, like solar installations. With only a single MOSFET working within a suitable duty cycle region, the proposed converter provides significant voltage gain and around 95% efficiency. Moreover, the MOSFET in this UHG converter is turned on in zero current switching (ZCS) mode, resolving the diode recovery issue. The recommended UHG converter’s working modes, steady-state parametric study, circuit variables like voltage stress on switching devices, and converter gain are all thoroughly explained. Comparisons have been done with comparable topologies presented in the literature, and lastly, experimental results depending on 200W (20V input, 320V output voltage) are given to validate the operation of the proposed UHG design.

AB - The need for high gain DC-DC converters has lately increased in tandem with the utilization of renewable energy supplies. Particularly appealing are high gain converters that do not require the inclusion of extra power switches and/or other passive elements to the system. As a result, this study proposes a non-isolated single switch converter with ultra-high voltage gain (UHG) that is appropriate for most renewable energy conversion systems, like solar installations. With only a single MOSFET working within a suitable duty cycle region, the proposed converter provides significant voltage gain and around 95% efficiency. Moreover, the MOSFET in this UHG converter is turned on in zero current switching (ZCS) mode, resolving the diode recovery issue. The recommended UHG converter’s working modes, steady-state parametric study, circuit variables like voltage stress on switching devices, and converter gain are all thoroughly explained. Comparisons have been done with comparable topologies presented in the literature, and lastly, experimental results depending on 200W (20V input, 320V output voltage) are given to validate the operation of the proposed UHG design.

U2 - 10.1109/ACCESS.2022.3233920

DO - 10.1109/ACCESS.2022.3233920

M3 - Article

SN - 2169-3536

VL - 11

SP - 2092

EP - 2104

JO - IEEE Access

JF - IEEE Access

ER -

Design and Implementation of a single switch high gain boost topology: Structure, Ripple Control and ZCS

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