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Diode-pumped mode-locked Tm: LuAG laser at 2 μm based on GaSb-SESAM

  • C. Luan
  • , K. Yang*
  • , J. Zhao
  • , S. Zhao
  • , T. Li
  • , H. Zhang
  • , J. He
  • , L. Song
  • , T. Dekorsy
  • , M. Guina
  • , L. Zheng
  • *Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    34 Citations (Scopus)

    Abstract

    Mode-locking of a directly diode-pumped Tm:LuAG laser is demonstrated using GaSb-based semiconductor saturable absorber mirrors (SESAMs). Stable and self-starting mode-locked operation was realized, generating pulses as short as 13.6 ps at 2024 nm with a maximum output power of 98 mW. Two GaInAs-based SESAMs were used for comparison with the operation based upon the use of the GaSb SESAM; in this case, longer pulses with durations of 27 ps and 34 ps were obtained under the same experimental conditions. Our work sets a new record in pulse duration for mode-locked Tm:LuAG lasers and confirms that lattice-matched GaSb-based SESAMs are beneficial for mode-locked solid-state lasers in the 2 μm range.

    Original languageEnglish
    Pages (from-to)839-842
    Number of pages4
    JournalOptics Letters
    Volume42
    Issue number4
    DOIs
    Publication statusPublished - 15 Feb 2017
    Publication typeA1 Journal article-refereed

    Publication forum classification

    • Publication forum level 2

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

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