Dislocation-induced electron and hole levels in InAs quantum-dot Schottky diodes

V. Polojärvi, A. Schramm, A. Aho, Antti Tukiainen, Markus Pessa

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    3 Citations (Scopus)
    Translated title of the contributionDislocation-induced electron and hole levels in InAs quantum-dot Schottky diodes
    Original languageEnglish
    Pages (from-to)2610-2613
    JournalPhysica E: Low-dimensional Systems and Nanostructures
    Volume42
    Issue number10
    DOIs
    Publication statusPublished - 2010
    Publication typeA1 Journal article-refereed

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