In MECSELs , a laser-active region solely is sandwiched between two heat spreaders and used in transmission mode to avoid the need of monolithically integrated distributed Bragg reflector (DBR) typically used in conventional vertical-external-cavity surface-emitting lasers . An additionally benefit is the possibility of two-side cooling as the active region without DBR can be embedded between two heat spreaders. A first successful implementation of semiconductor membrane laser, also called DBR-free semiconductor disk laser  was investigated, with the laser-active semiconductor membrane bonded onto a single intra-cavity (IC) heat spreader. Yang et al. recently demonstrated the first silicon carbide (SiC) MECSEL emitting approximately at 1037 nm .
|Number of pages||1|
|Publication status||Published - 17 Oct 2019|
|Publication type||Not Eligible|
|Event|| 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany|
Duration: 23 Jun 2019 → 27 Jun 2019
|Conference||2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)|
|Period||23/06/19 → 27/06/19|