Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

Emil-Mihai Pavelescu, Ville Polojärvi, Andreas Schramm, Antti Tukiainen, Arto Aho, Wenxin Zhang, Janne Puustinen, Joel Salmi, Mircea Guina

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)

    Abstract

    We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.

    Original languageEnglish
    Pages (from-to)177-180
    Number of pages4
    JournalOptical Materials
    Volume52
    DOIs
    Publication statusPublished - 1 Feb 2016
    Publication typeA1 Journal article-refereed

    Keywords

    • Dilute nitrides
    • Molecular beam epitaxy
    • Optical properties

    Publication forum classification

    • Publication forum level 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics
    • Computer Science(all)

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