Effects of (NH4)2S and NH4OH surface treatments prior to SiOs capping and thermal annealing on 1.3 um GaIn/GaAs quantum well structures

V. Polojärvi; J. Salmi; A. Schramm; A. Tukiainen; M. Guina; J. Pakarinen; E. Arola; J. Lång; I.J. Väyrynen; P. Laukkanen

doi:10.1063/1.3487784

Effects of (NH4)2S and NH4OH surface treatments prior to SiOs capping and thermal annealing on 1.3 um GaIn/GaAs quantum well structures

V. Polojärvi, J. Salmi, A. Schramm, A. Tukiainen, M. Guina, J. Pakarinen, E. Arola, J. Lång, I.J. Väyrynen, P. Laukkanen

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Translated title of the contribution	Effects of (NH4)2S and NH4OH surface treatments prior to SiOs capping and thermal annealing on 1.3 um GaIn/GaAs quantum well structures
Original language	English
Pages (from-to)	111109-1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	11, 111109
DOIs	https://doi.org/10.1063/1.3487784
Publication status	Published - 2010
Publication type	A1 Journal article-refereed

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Publication forum level 2

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10.1063/1.3487784

Cite this

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title = "Effects of (NH4)2S and NH4OH surface treatments prior to SiOs capping and thermal annealing on 1.3 um GaIn/GaAs quantum well structures",

author = "V. Poloj{\"a}rvi and J. Salmi and A. Schramm and A. Tukiainen and M. Guina and J. Pakarinen and E. Arola and J. L{\aa}ng and I.J. V{\"a}yrynen and P. Laukkanen",

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T1 - Effects of (NH4)2S and NH4OH surface treatments prior to SiOs capping and thermal annealing on 1.3 um GaIn/GaAs quantum well structures

AU - Polojärvi, V.

AU - Salmi, J.

AU - Schramm, A.

AU - Tukiainen, A.

AU - Guina, M.

AU - Pakarinen, J.

AU - Arola, E.

AU - Lång, J.

AU - Väyrynen, I.J.

AU - Laukkanen, P.

N1 - poistettu tupla r=3194<br/>Contribution: organisation=orc,FACT1=0.5<br/>Contribution: organisation=fys,FACT2=0.5

PY - 2010

Y1 - 2010

U2 - 10.1063/1.3487784

DO - 10.1063/1.3487784

M3 - Article

SN - 0003-6951

VL - 97

SP - 111109-1-3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11, 111109

ER -