Translated title of the contribution | Effects of rapid thermal annealing on InP layers grown on GaAs substrates by gas-source molecular beam epitaxy |
---|---|
Original language | English |
Journal | Journal of Vacuum Science and Technology |
Volume | B 9 |
Issue number | 176 |
Publication status | Published - 1991 |
Publication type | A1 Journal article-refereed |
Publication forum classification
- No publication forum level