Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy

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Translated title of the contribution	Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy
Original language	English
Pages (from-to)	4565-4570
Journal	Journal of Applied Physics
Volume	74
Publication status	Published - 1993
Publication type	A1 Journal article-refereed

Publication forum classification

@article{8eeee30d3479467bbaeed8f2a896a036,

title = "Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy",

author = "K. Tappura",

note = "Contribution: organisation=fys,FACT1=1",

year = "1993",

language = "English",

volume = "74",

pages = "4565--4570",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

}