Electrical switching of photoluminescence of single site-controlled InAs quantum dots

A. Schramm, E. Koski, J. M. Kontio, J. Tommila, T. V. Hakkarainen, D. Lupo, M. Guina

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

    Original languageEnglish
    Pages (from-to)1240-1242
    Number of pages3
    JournalElectronics Letters
    Volume52
    Issue number14
    DOIs
    Publication statusPublished - 7 Jul 2016
    Publication typeA1 Journal article-refereed

    Publication forum classification

    • Publication forum level 1

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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