Electrical switching of photoluminescence of single site-controlled InAs quantum dots

A. Schramm; E. Koski; J. M. Kontio; J. Tommila; T. V. Hakkarainen; D. Lupo; M. Guina

doi:10.1049/el.2016.0502

Electrical switching of photoluminescence of single site-controlled InAs quantum dots

A. Schramm
, E. Koski
, J. M. Kontio^*
, J. Tommila
, T. V. Hakkarainen
, D. Lupo
, M. Guina

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

Original language	English
Pages (from-to)	1240-1242
Number of pages	3
Journal	Electronics Letters
Volume	52
Issue number	14
DOIs	https://doi.org/10.1049/el.2016.0502
Publication status	Published - 7 Jul 2016
Publication type	A1 Journal article-refereed

Publication forum classification

Publication forum level 1

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2016.0502

Cite this

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title = "Electrical switching of photoluminescence of single site-controlled InAs quantum dots",

abstract = "Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.",

author = "A. Schramm and E. Koski and Kontio, \{J. M.\} and J. Tommila and Hakkarainen, \{T. V.\} and D. Lupo and M. Guina",

year = "2016",

month = jul,

day = "7",

doi = "10.1049/el.2016.0502",

language = "English",

volume = "52",

pages = "1240--1242",

journal = "Electronics Letters",

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publisher = "John Wiley \& Sons",

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T1 - Electrical switching of photoluminescence of single site-controlled InAs quantum dots

AU - Schramm, A.

AU - Koski, E.

AU - Kontio, J. M.

AU - Tommila, J.

AU - Hakkarainen, T. V.

AU - Lupo, D.

AU - Guina, M.

PY - 2016/7/7

Y1 - 2016/7/7

N2 - Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

AB - Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

U2 - 10.1049/el.2016.0502

DO - 10.1049/el.2016.0502

M3 - Article

AN - SCOPUS:84976650045

SN - 0013-5194

VL - 52

SP - 1240

EP - 1242

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Electrical switching of photoluminescence of single site-controlled InAs quantum dots

Abstract

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